Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study
نویسندگان
چکیده
S. Sayan 1, , R. A. Bartynski, X. Zhao, E. P. Gusev, D. Vanderbilt, M. Croft, M. Banaszak Holl, and E. Garfunkel 1 1 Department of Chemistry, Rutgers University, Piscataway, NJ 08854, USA 2 Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA 3 Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA 4 IBM T. J. Watson Research Center, Yorktown Heights, New York, USA 5 Department of Chemistry, University of Michigan, Ann Arbor, MI 48109, USA
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